porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 180A 68V N-canali Enhancement Modus Potestatis MOSFET

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

180A 68v N-canale Enhancement Modus Power MOSFET

Hi N-channel amplificationis modus potentiae mosfets usus provectae Splite portae technologiae consilium, si Rdson et portae humilem crimen praestantem praebebat. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
  • DHS026N06/DHS026N06F/DHS026N06E

  • WXDH

180A 85V N-canale Enhancement Modus Power MOSFET


1 Description

Hi N-channel amplificationis modus potentiae mosfets usus provectae Splite portae technologiae consilium, si Rdson et portae humilem crimen praestantem praebebat. Quod congruit cum RoHS vexillum. 


2 Features 

Fast commutatione

Minimum resistente 

Maximum crimen porta 

Maximum NIVIS current

Minimum vicissim translationis capacitates

C% unius pulsus NIVIS industria test

C% VDS test 


III Applications

Power switching applications

Inverter systema procuratio

Power instrumenta 

Automotive electronics

VDSS RDS(on)(TYP) ID
68V 2.6mΩ 180A


Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostro newsletter accipere updates recta in capsa tua