Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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12N65/F12N65

12A 650V N-channel Enhancement Mode Power MOSFET
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12A 650V N-channel Enhancement Mode Power MOSFET

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

● Fast Switching

● Low ON Resistance(Rdson≤0.8Ω)

● Low Gate Charge(Typ: 40nC)

● Low Reverse Transfer Capacitances(Typ: 9.5pF)

● 100% Single Pulse Avalanche Energy Test

● 100% ΔVDS Test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.


VDSS RDS(on)(TYP) ID
650V 0.66Ω 12A


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