12n65 / F12N65

12A 650v N-Channel Enhancement Modus Power Mosfet

I Description

Hi Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere ad

Conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum Radii vexillum.

II features

● Fast Switching

● humilis super resistentia (rdson≤0.8Ω)

● Minimum porta (Typ, 40nc)

● Minimum Reverse Transfer Capitances (Typ: 9.5pf)

● C% unum pulsus Copyops Nectrix Energy Test

● C% Δvds test

III Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.

● Power SWITCH CIRCUM ADAPTER et patina.