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DHS008N04P
WXDH
DHS008N04P
DFN5X6
40V
100A
100A 40V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● AEC-Q101 qualified
3 Applications
● Automotive application
● Battery management
● UPS (Uninterruptible Power Supplies)
● Synchronous Rectification for AC/DC Quick Charger
VDSS | RDS(on)(TYP) | ID | ID |
40V | 0.83mΩ | 300A (Silicon limited) | 100A (Packagelimited) |
100A 40V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● AEC-Q101 qualified
3 Applications
● Automotive application
● Battery management
● UPS (Uninterruptible Power Supplies)
● Synchronous Rectification for AC/DC Quick Charger
VDSS | RDS(on)(TYP) | ID | ID |
40V | 0.83mΩ | 300A (Silicon limited) | 100A (Packagelimited) |