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7a 800v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs
vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤1.8Ω)
● Minimum porta (Typ: 33.9nc)
● Humilis Reverse Transfer Capitances (Typ: 11.2pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
in variis potentia switching circuitu system Miniaturization et altius efficientiam.
potentia switch circa electronicam saburram et nibh.
Vdss | RDS (on) (Typ) | Id |
800V | 1.5Ω | 7a |
7a 800v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs
vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis super resistentia (rdson≤1.8Ω)
● Minimum porta (Typ: 33.9nc)
● Humilis Reverse Transfer Capitances (Typ: 11.2pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
in variis potentia switching circuitu system Miniaturization et altius efficientiam.
potentia switch circa electronicam saburram et nibh.
Vdss | RDS (on) (Typ) | Id |
800V | 1.5Ω | 7a |