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7a 650v N-Channel Enhancement Modus Power Mosfet
I Description
Hi Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere ad
Conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤1.45Ω)
● Minimum porta (Typ, 24nc)
● Minimum Reverse Transfer Capitances (Typ, 5.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUM ADAPTER et patina.
Vdss | RDS (on) (Typ) | Id |
650v | 1.25Ω | 7a |
7a 650v N-Channel Enhancement Modus Power Mosfet
I Description
Hi Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere ad
Conduction damnum, amplio switching perficientur et augendae avalanche navitas. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤1.45Ω)
● Minimum porta (Typ, 24nc)
● Minimum Reverse Transfer Capitances (Typ, 5.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUM ADAPTER et patina.
Vdss | RDS (on) (Typ) | Id |
650v | 1.25Ω | 7a |