N-channel Enhancement Mode Power MOSFET 13A 500V F13N50 TO-220F

N-channel Enhancement Mode Power MOSFET 13A 500V

1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 

2 Features 

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤0.45Ω) 

● Low gate charge(Typ: 40nC)

● Low reverse transfer capacitances(Typ: 11pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications 

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.