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DHS051N10P
WXDH
108A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.0mΩ | 108A |
108A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.0mΩ | 108A |
