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DHS051N10P DFN5X6

These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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108A 100V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhancement mode power mosfets used advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features

● Fast switching 

● Low on resistance

● Low gate charge 

● High avalanche current 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test


3 Applications 

● Switching power supply

● Inverter power management system 

● Power tool control 

● Automotive electronics applications

VDSS RDS(on)(TYP) ID
100V 5.0mΩ 108A


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