Availability: | |
---|---|
Quantity: | |
F4N60
WXDH
F4N60
TO-220F
600V
4A
4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.5Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 4.0pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
600V | 2.1Ω | 4A |
4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.5Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 4.0pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
600V | 2.1Ω | 4A |