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DH026N06E
WXDH
TO-263
60V
238A
238A 60V N-channel Enhancement Mode Power MOSFET
1 Description
The DH026N06 is an N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
VDSS | RDS(on)(TYP) | ID |
60V | 2.6mΩ | 238A |
238A 60V N-channel Enhancement Mode Power MOSFET
1 Description
The DH026N06 is an N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Switching power supply
● Inverter power management system
● Power tool control
● Automotive electronics applications
VDSS | RDS(on)(TYP) | ID |
60V | 2.6mΩ | 238A |