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20A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.4Ω)
● Low gate charge(Typ: 162nC)
● Low reverse transfer capacitances(Typ: 63.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switch circuit of PC power.
VDSS | RDS(on)(TYP) | ID |
900V | 0.31Ω | 20A |
20A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.4Ω)
● Low gate charge(Typ: 162nC)
● Low reverse transfer capacitances(Typ: 63.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switch circuit of PC power.
VDSS | RDS(on)(TYP) | ID |
900V | 0.31Ω | 20A |