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20A 900V N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤0.4Ω)
● Minimum portam (Typ, 162nc)
● Low Reverse Transfer Capitances (Typ, 63.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● potentia SWITCH CIRCUS PC potentia.
Vdss | RDS (on) (Typ) | Id |
900V | 0,31Ω | 20A |
20A 900V N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤0.4Ω)
● Minimum portam (Typ, 162nc)
● Low Reverse Transfer Capitances (Typ, 63.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● potentia SWITCH CIRCUS PC potentia.
Vdss | RDS (on) (Typ) | Id |
900V | 0,31Ω | 20A |