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DSN108N20N
WXDH
DSN108N20N
TO-3PN
200V
110A
200V/11mΩ/110A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Application
• Power switching applications
• DC-DC converters
• Full bridge control
VDSS | RDS(on)(TYP) | ID | Package |
200V | 11mΩ | 110A | TO-3PN |
200V/11mΩ/110A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Application
• Power switching applications
• DC-DC converters
• Full bridge control
VDSS | RDS(on)(TYP) | ID | Package |
200V | 11mΩ | 110A | TO-3PN |