200V/11mΩ/110A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Application
• Power switching applications
• DC-DC converters
• Full bridge control
| VDSS |
RDS(on)(TYP) |
ID |
Package |
| 200V |
11mΩ |
110A |
TO-3PN |