Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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18A 500V N-channel Enhancement Mode Power MOSFET 18N50 TO-220C

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. Which accords with the RoHS standard.
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18A 500V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 


2 Features 

● Fast switching 

● ESD improved capability 

● Low on resistance(Rdson≤0.35Ω) 

● Low gate charge(Typ: 52nC) 

● Low reverse transfer capacitances(Typ: 16pF)

● 100% single pulse avalanche energy test 

● 100% ΔVDS test


3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.

VDSS  RDS(on)(TYP) ID 
500V 0.24Ω 18A



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