 |
| Quantity: | |
|---|---|
D12N06
WXDH
12A 60V N-channel Enhancement Mode Power MOSFET
1 Description
D12N06 is an N-channel enhancement mode power field-effect transistor. Using advanced trench technology design, providing excellent Rdson and low gate charge.The product can be used in a wide variety of application.The package form is TO-252. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications:
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
| Vces | RDS(on) (TYP) | ID |
| 60V | 56mΩ | 12A |
12A 60V N-channel Enhancement Mode Power MOSFET
1 Description
D12N06 is an N-channel enhancement mode power field-effect transistor. Using advanced trench technology design, providing excellent Rdson and low gate charge.The product can be used in a wide variety of application.The package form is TO-252. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications:
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
| Vces | RDS(on) (TYP) | ID |
| 60V | 56mΩ | 12A |
