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| Quantity: | |
|---|---|
DSD090N10L3A
WXDH
100V/8mΩ/68A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
• DC-DC converters
• Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 8mΩ | 68A |
100V/8mΩ/68A N-MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
• DC-DC converters
• Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 8mΩ | 68A |
