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B1N60
WXDH
TO-251B
600V
0.8A
0.8A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤15Ω)
● Low gate charge(Typ: 4nC)
● Low reverse transfer capacitances(Typ: 2.6pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
VDSS | RDS(on)(TYP) | ID |
600V | 11Ω | 0.8A |
0.8A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤15Ω)
● Low gate charge(Typ: 4nC)
● Low reverse transfer capacitances(Typ: 2.6pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
VDSS | RDS(on)(TYP) | ID |
600V | 11Ω | 0.8A |