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B1N60
Wxdh
Ad-251b
600v
0.8a
0.8a 600v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● humilis in resistentia (rdson≤15Ω)
● Minimum porta (Typ, 4nc)
● Low Reverse Transfer Capitances (Typ: 2.6pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUS of Electron Salker
Vdss | RDS (on) (Typ) | Id |
600v | 11ω | 0.8a |
0.8a 600v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● humilis in resistentia (rdson≤15Ω)
● Minimum porta (Typ, 4nc)
● Low Reverse Transfer Capitances (Typ: 2.6pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUS of Electron Salker
Vdss | RDS (on) (Typ) | Id |
600v | 11ω | 0.8a |