porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Igbt » 1200V 1700V » DGC75F120M2

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

DGC75F120M2

75a 1200V trenchstop insulatas portam bipolar Transistor
availability:
Quantitas:

75a 1200V trenchstop insulatas portam bipolar Transistor

Descriptio 

Using Donghai proprietary fossa consilio et provectus Fs technology, 1200V fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.

Features:

 fs fossam technology, positivum temperatus coefficiens

 Minimum Saturation intentione: VCE (Sat), Typ = 2.1V @ IC = 75a et TJ = XXV ° C

 maxime amplificata avalanche facultatem

Applications:

Welding, ups, tres-gradu inverter

Genus

VCE IC Vcsat, TJ = XXV ℃ Tjmax Sarcina
DGC75F120M2 1200V 75a 2.1v CLXXV ℃ Ad 247plus


Previous: 
Next: 
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo