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75a 1200V trenchstop insulatas portam bipolar Transistor
Descriptio
Using Donghai proprietary fossa consilio et provectus Fs technology, 1200V fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.
Features:
fs fossam technology, positivum temperatus coefficiens
Minimum Saturation intentione: VCE (Sat), Typ = 2.1V @ IC = 75a et TJ = XXV ° C
maxime amplificata avalanche facultatem
Applications:
Welding, ups, tres-gradu inverter
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Tjmax | Sarcina |
DGC75F120M2 | 1200V | 75a | 2.1v | CLXXV ℃ | Ad 247plus |
75a 1200V trenchstop insulatas portam bipolar Transistor
Descriptio
Using Donghai proprietary fossa consilio et provectus Fs technology, 1200V fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem.
Features:
fs fossam technology, positivum temperatus coefficiens
Minimum Saturation intentione: VCE (Sat), Typ = 2.1V @ IC = 75a et TJ = XXV ° C
maxime amplificata avalanche facultatem
Applications:
Welding, ups, tres-gradu inverter
Genus | VCE | IC | Vcsat, TJ = XXV ℃ | Tjmax | Sarcina |
DGC75F120M2 | 1200V | 75a | 2.1v | CLXXV ℃ | Ad 247plus |