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DGC75F120M2

75A 1200V Trenchstop Insulae Porta Bipolar Transistor
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75A 1200V Trenchstop Insulae portae Bipolar Transistor

Description1 

Trench consilio usus DongHai et technologiae FS provectae, 1200V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.

Features：

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 2.1V @ IC = 75A et Tj = 25°C

valde auctus facultatem NIVIS CASUS

Applications

Welding, UPS, Tres gradus Inverter

Type

 Vce Ic Vcesat,Tj=25℃ Tjmax sarcina
DGC75F120M2 1200V 75A 2.1V 175 TO-247PLUS


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