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8A 650v N-Channel Enhancement Modus Power Mosfet F8N65 ad-220F

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria.
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8a 650v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. Ad-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906).

II features

● Fast Switching 

● ESD improved facultatem

● humilis in resistentia (rdson≤1.4Ω) 

● Minimum porta (Typ, 23.7nc) 

● Low Reverse Transfer Capitatuarum (Typ, 6.1pf) 

● C% unum pulsus Copyops Nectrix Energy Test

● C% Δvds test 


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.


Vdss  RDS (on) (Typ) Id 
650v 1.15Ω 8a



Download 英英版 F8n65 技术规格书 220F.pdf

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