Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 400V-1500V N MOS » 8A 650V N-canali Enhancement Modus Potestatis MOSFET F8N65 TO-220F

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8A 650V N-canale Enhancement Modus Power MOSFET F8N65 TO-220F

Haec N-canali vdmosfets aucta, a technologia planaria auto-aligna facta, quae conductionem damnum minuunt, emendae commutationes perficiendi et NIVIS energiae augendae.
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8A 650V N-canale Enhancement Modus Power MOSFET


1 Description

Haec N-canale vdmosfets aucta, a technologia plani auto-aligna fit quae damnum conductionis minuit, emendare mutandi effectum et NIVIS energiam augere. Quod congruit cum RoHS vexillum. TO-220F praebet intentionem insulationem in 2000V RMS aestimatam ab omnibus tribus terminalibus calorum externorum. TO-220F series signa UL parere (File ref:E252906).

2 Features

Fast commutatione 

ESD melius facultatem

● Minimum resistente (Rdson≤1.4Ω) 

● Praefectum portae Minimum (Typ: 23.7nC) 

Minimum contra capacitates translationis (Typ: 6.1pF) 

C% unius pulsus NIVIS industria test

C% VDS test 


III Applications 

● In variis vi mutandi circuitio ad systema miniaturizationis et efficientiae superioris adhibita. 

● Potestas transiens ambitum electronici adprehensis et adaptor.


VDSS  RDS(on)(TYP) ID 
650V 1.15Ω 8A



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