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Hic es: Home » Products » IGBT » 600V-650V » 75A 650V Trenchstop Insulae portae Bipolar Transistor DGC75F65M TO-247-3L

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75A 650V Trenchstop Insulae Bipolar Transistor DGC75F65M TO-247-3L

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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75A 650V Trenchstop Insulae Bipolar Transistor


1 Descriptio Fossae proprietatis utens DongHai consilio et progressu technologiae FS, 650V FS IGBT praebet operas maiores et commutationes, NIVIS asperitas altam operationem facilem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 75A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Welding 

UPS 

Tres-gradu Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax sarcina
650V 1.7V 75A  175 TO-247-3L


download DGC75F65M_datasheet-Rev1.1(2).pdf

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