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75a 650V trenchstop insulatas portam bipolar Transistor DGC75F65M ad-247-3L

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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75a 650V trenchstop insulatas portam bipolar Transistor


I Description Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Ruggedeness Securus 


II features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 1.7v @ IC = 75a et TJ = XXV ° 

● maxime amplificata avalanche facultatem 


III Applications 

● Welding 

● UPS 

● tres-gradu inverter


VCE Vcsat, TJ = XXV ℃ IC Tjmax Sarcina
650v 1.7v 75a  CLXXV ℃ Ad 247-3l


Download DGC75F65M_DATASHEET, Rev1.1 (II) .pdf

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