2a 600v N-Channe Enhancement Modus Power Mosfet F2N60 ad-220F

2a 600v N-Channe Enhancement Modus Power Mosfet

I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 

II features 

● Fast Switching 

● humilis in resistentia (rdson≤4.5ω) 

● Minimum porta (Typ, 8nc) 

● Low Reverse Transfer Capitances (Typ, 3.8pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test

III Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.