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250A 1200V Medium pontis moduli moduli IGBTModule DGB250H120L2T 62mm

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, praeclarum VCEsat et celeritate mutandi, portae humilitatis praefectum adhibebant. Quod congruit cum RoHS vexillum.
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250A 1200V Medium pontis moduli


1 Description 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, praeclarum VCEsat et celeritate mutandi, portae humilitatis praefectum adhibebant. Quod congruit cum RoHS vexillum. 


2 Features 

  FS Trench Technology, caliditas positiva coefficientis 

  Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 600A et Tj = 25°C 

  valde auctus facultatem NIVIS CASUS 


III Applications 

  • Welding 

  • UPS 

  • Tres gradu Inverter 

  • AC et DC servo amplio coegi


    Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
    DGB250H120L2T 1200V 250A (Tj=100℃) 1.95V (Type) 175 62MM
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