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Dhs055n85
Wxdh
Ad-220c
85v
110a
Vdss | RDS (on) (Typ) | Id |
85v | 5.5Mω | 110a |
110a N-Channel Mosfet utitur enhancement mode technology, quae requirit positivum intentione ad portam terminatio ad conversus in. Hoc pluma dat Mosfet ad operari efficacius in altus-potentia environments, faciens idoneam ups systems et alia potentia switching applications. Et humilis on-resistentia et ieiunium switching capabilities, hoc mosfet est optimized ad applications in quo efficientiam et velox responsum temporibus sunt discrimine. Praeterea, humilis vicissim translatio capacitance minimizes potestate damnum, cursus in fabrica potest tractare princeps current onerat sine comprominging perficientur.
Hoc n-channel Mosfet est specimen pro applications quod requirere princeps virtutis procuratio, ut ups systems, DC-DC Converters, motor controls, et synchrone, in switch-mode virtutis, et synchronum in switch-mode supplet (SPPS). Et facultatem ad tractamus usque 110a of current et 85v de voltage facit maxime efficax in maintaining firmum potestatem durante switching eventus. Utrum in an industrialis ups ratio, summus celeritas motricium controls, aut potestas switching circuits, in Mosfet ensures reliable et consistent perficientur in exposcens ambitus.
- High Current facultatem: 110a N-Channel Mosfet constructum est tractare princeps virtutis postulat, faciens illud optimum arbitrium ad gravibus-officium applications ut ups systems.
- Low on-Resistentia: Per Utiling Advanced Valley Technology, hoc Mosfet offert humilis RDSon (on-resistentia), reducendo potentia damnum et meliorem altiore efficientiam.
- Fast Switching: et Mosfet scriptor Fast Switching celeritate ensures minima mora durante potestate transitionum, quae est crucial, quia continua potestas potestatem commeatus et alia realis-vicis potentia potestate systems.
- Diuturnitatem et Reliability: Hoc Mosfet Underes Rigorous Testing, comprehendo C% unum pulsus NIVIS NIVIS NIVIS NIVIS CASTRING industria probat, ensuring eam occurrit in summa industria signa ad diuturnitatem et reliability. Et robust consilio ensures diu operational vitae usque in altum-accentus ambitibus.
In summary, the 110A N-channel Enhancement Mode MOSFET is designed for high-efficiency power switching applications, offering fast switching speeds, low resistance, and the capacity to handle large currents, making it ideal for UPS systems and other demanding power management applications
Vdss | RDS (on) (Typ) | Id |
85v | 5.5Mω | 110a |
110a N-Channel Mosfet utitur enhancement mode technology, quae requirit positivum intentione ad portam terminatio ad conversus in. Hoc pluma dat Mosfet ad operari efficacius in altus-potentia environments, faciens idoneam ups systems et alia potentia switching applications. Et humilis on-resistentia et ieiunium switching capabilities, hoc mosfet est optimized ad applications in quo efficientiam et velox responsum temporibus sunt discrimine. Praeterea, humilis vicissim translatio capacitance minimizes potestate damnum, cursus in fabrica potest tractare princeps current onerat sine comprominging perficientur.
Hoc n-channel Mosfet est specimen pro applications quod requirere princeps virtutis procuratio, ut ups systems, DC-DC Converters, motor controls, et synchrone, in switch-mode virtutis, et synchronum in switch-mode supplet (SPPS). Et facultatem ad tractamus usque 110a of current et 85v de voltage facit maxime efficax in maintaining firmum potestatem durante switching eventus. Utrum in an industrialis ups ratio, summus celeritas motricium controls, aut potestas switching circuits, in Mosfet ensures reliable et consistent perficientur in exposcens ambitus.
- High Current facultatem: 110a N-Channel Mosfet constructum est tractare princeps virtutis postulat, faciens illud optimum arbitrium ad gravibus-officium applications ut ups systems.
- Low on-Resistentia: Per Utiling Advanced Valley Technology, hoc Mosfet offert humilis RDSon (on-resistentia), reducendo potentia damnum et meliorem altiore efficientiam.
- Fast Switching: et Mosfet scriptor Fast Switching celeritate ensures minima mora durante potestate transitionum, quae est crucial, quia continua potestas potestatem commeatus et alia realis-vicis potentia potestate systems.
- Diuturnitatem et Reliability: Hoc Mosfet Underes Rigorous Testing, comprehendo C% unum pulsus NIVIS NIVIS NIVIS NIVIS CASTRING industria probat, ensuring eam occurrit in summa industria signa ad diuturnitatem et reliability. Et robust consilio ensures diu operational vitae usque in altum-accentus ambitibus.
In summary, the 110A N-channel Enhancement Mode MOSFET is designed for high-efficiency power switching applications, offering fast switching speeds, low resistance, and the capacity to handle large currents, making it ideal for UPS systems and other demanding power management applications