Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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IGBTModule DGB800H120L2T

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DGB800H120L2T

  • WXDH

800A 1200V Half bridge module


1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =800A and Tj = 25°C

● Extremely enhanced avalanche capability


3 Applications 

  •  Welding 

  •  UPS 

  •  Three-leve Inverter 

  •  AC and DC servo drive amplifier

TypeVCEIcVCEsat,Tj=25℃TjopPackage
DGQ450C65M2T1200V800A (Tj=100℃)1.7V (Typ)175℃62MM


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