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800A 1200V Medium pontis moduli IGBTModule DGB800H120L2T

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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  • DGB800H120L2T

  • WXDH

  • 62MM

  • DGB800H120L2T.pdf

  • 1200V

  • 800A

800A 1200V Medium pontis moduli


1 Description 

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum. 


2 Features 

● FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 800A et Tj = 25°C

valde auctus facultatem NIVIS CASUS


III Applications 

  •  Welding 

  •  UPS 

  •  Tres gradu Inverter 

  •  AC et DC servo coegi amplifier

Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
DGQ450C65M2T 1200V 800A (Tj=100℃) 1.7V (Type) 175 62MM


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