F4N80/B4N80

4A 800V N-channel Enhancement Mode Power MOSFET

1 Description

F4N80 These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS

standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards. 

2 Features

 Fast Switching

 Low ON Resistance(Rdson≤4.0Ω)

 Low Gate Charge (Typical Data:17.3 nC)

 Low Reverse transfer capacitances(Typical: 4.3pF)

 100% Single Pulse avalanche energy Test

3 Applications

 Used in various power switching circuit for system miniaturization and higher efficiency.

 Power switch circuit of electron ballast and adaptor.