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4A 800V N-channel Enhancement Mode Power MOSFET
1 Description
F4N80 These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
2 Features
Fast Switching
Low ON Resistance(Rdson≤4.0Ω)
Low Gate Charge (Typical Data:17.3 nC)
Low Reverse transfer capacitances(Typical: 4.3pF)
100% Single Pulse avalanche energy Test
3 Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
800V | 3.7Ω | 4A |
4A 800V N-channel Enhancement Mode Power MOSFET
1 Description
F4N80 These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
2 Features
Fast Switching
Low ON Resistance(Rdson≤4.0Ω)
Low Gate Charge (Typical Data:17.3 nC)
Low Reverse transfer capacitances(Typical: 4.3pF)
100% Single Pulse avalanche energy Test
3 Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
800V | 3.7Ω | 4A |