porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Mosfet » 400V, 1500v N Mos » F4N80 / B4N80

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

F4N80 / B4N80

4A 800V N-Channel Enhancement Modus Power Mosfet
Availability
:

4a 800v n-channel enhancement mode potentia Mosfet

I Description

F4N80 Hi n-channel enhanced vdmosfets, est adeptus per se-aligned Planar technology quod reducere conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs

vexillum. Ad-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f series propinquos meos Ul signa. 

II features

 Fast Switching

 humilis in resistentia (rdson≤4.0Ω)

 Minimum porta (typical data: 17.3 NC)

 Minimum Reverse Transfer Capitances (Typical: 4.3pf)

 C% una pulsus Copyops NIVIS CASUS Energy Test

III Applications

 in variis potentia switching circuitu system Miniaturization et altius efficientiam.

 potentia switch circa electronicam saburram et nibh.


Vdss RDS (on) (Typ) Id
800v 3.7Ω 4a


Previous: 
Next: 
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo