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9A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.3Ω)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 900V | 0.92Ω | 9A |
9A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS
standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.3Ω)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 900V | 0.92Ω | 9A |
