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Jiangsu Donghai Semiconductor Co., Ltd
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65A 100V N-channel Enhancement Mode Power MOSFET

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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Quantity:
  • DHS130N10/DHS130N10F/DHS130N10E/DHS130N10B/DHS130N10D

  • WXDH

65A 100V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test


3 Applications 

● Synchronous rectification for AC/DC quick charger 

● Power tools 

● UPS(Uninterrupible Power Supplies) 

● Motor control 

● Battery management

VDSS RDS(on)(TYP) ID
100V 11.0mΩ 65A


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