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| Quantity: | |
|---|---|
G50T65D
WXDH
TO-3PN
650V
50A
50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Vcesat,Tj=25℃ | Ic |
| 650V | 2.0V | 50A |
50A 650V Trenchstop Insulated Gate Bipolar Transistor
1 Description
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Vcesat,Tj=25℃ | Ic |
| 650V | 2.0V | 50A |
