Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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50A 650V Trenchstop Insulated Gate Bipolar Transistor G50T65D TO-3PN

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
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  • G50T65D

  • WXDH

50A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description 


Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter

Vces Vcesat,Tj=25℃ Ic
650V 2.0V 50A


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