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50A 650V trenchstop insulatas portam bipolar Transistor G50T65d ad-3pn

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
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50A 650V trenchstop insulatas portam bipolar Transistor

I Description 


Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 2.0v @ IC = 50A et TJ = XXV ° C 

● maxime amplificata avalanche facultatem 


III Applications 

● Welding 

● UPS 

● tres-gradu inverter



Vces Vcsat, TJ = XXV ℃ IC
650v 2.0v 50A


Download Fabrica DHG50T65D speciem (to-3pn) .pdf

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