 |
| Quantity: | |
|---|---|
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.8Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 3.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4A |
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the
conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.8Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 3.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 2.4Ω | 4A |
