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4N65/F4N65/B4N65/D4N65

4A 650V N-channel Enhancement Mode Power MOSFET
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4A 650V N-channel Enhancement Mode Power MOSFET

1 Description

These silicon N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the

conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

● Fast switching

● ESD improved capability

● Low on resistance(Rdson≤2.8Ω)

● Low gate charge(Typ: 14.5nC)

● Low reverse transfer capacitances(Typ: 3.5pF)

● 100% single pulse avalanche energy test

● 100% ΔVDS test

3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of adaptor and charger.


VDSS RDS(on)(TYP) ID
650V 2.4Ω 4A


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