未命名(1)(8) (1)
gate
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » 40V/5.5mΩ/82AN-MOSFET DSD065N04LA TO-252

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

40V/5.5mΩ/82AN-MOSFET DSD065N04LA TO-252

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
Inquire Add to Basket

40V/5.5mΩ/82A N-MOSFET


1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 


2 Features 

• AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test 

● 100% ΔVDS test

● Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

• Motor Control and Drive 

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS

• Automotive Application


VDSS RDS(on)(TYP) ID
40V 5.5mΩ 82A


Previous: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox
    Submit
Copyright © 2023​​​​​​​ Jiangsu Donghai Semiconductor Co., Ltd   Technology by leadong.com