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40V/4.0mΩ/66AN-MOSFET DSP060N04LA DFN5*6

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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40V/4.0mΩ/66A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

● Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

● Motor Control and Drive

● Charge/Discharge for Battery Management System

● Synchronous Rectifier for SMPS

● Automotive Application


VDSS RDS(on)(TYP) ID
40V 4.0mΩ 66A


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