Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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40A 200V Fast recovery diode MUR4020NCT TO-3PN

40A, 200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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  • MUR4020NCT

  • WXDH

40A 200V Fast recovery diode


1 Description

Description 40A, 200V Ultrafast Diodes They have a low forward voltage drop and are of  planar, silicon nitride passivated, ion-implanted, epitaxial construction. These  devices are intended for use as energy steering/clamping diodes and rectifi ers in a variety of switching power supplies and other power switching  applications. Their low stored charge and ultrafast recovery with soft recovery  characteristics minimizes ringing and electrical noise in many power switching  circuits, thus reducing power loss in the switching transistor 


2 Features 

  •  Low power loss, 

  •  high efficiency Low forward voltage, 

  •  high current capability High surge capacity 

  •  Super fast recovery times 

  •  high voltage


3 Applications

  •  Switching Power Supply 

  •  Power Switching Circuits

  •  Inverter power supply


VBR VF(single)(MAX) IF(AV)(single)
200V 1.1V 20A



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