40a, 200V ultrafast Diodes habent humilem deinceps voltas gutta et sunt de Planar, Silicon Nitride passivated, Ion-implantata, epitaxial constructione.
Descriptio 40a, 200V ultrafast Diodes habent humilem deinceps voltastage gutta et sunt de Planar, Silicon Nitride passivated, Ion-implantata, epitaxial constructione. His cogitationes sunt in animo usu ut industria steering / clamping Diodes et rectifi ers in variis mutatis switching potentia commeatus et alia potentia switching applications. Minimum recuperatio et mollis et mollis recuperare christifs Minimizes sonant et electrica sonitus in multis virtute switching, ita reducendo potentia damnum switching transistor
II features
Minimum damnum
Maximum efficientiam humilis deinceps voltage
princeps current facultatem princeps Surge capacitatem
Super ieiunium convaluisset tempora
High voltage
III Applications
Switching potentia copia
Power Switching Circuitus
Inverter potentia copia
Vbr
VF (Single) (Max)
Si (VULGATE) (Single)
200V
1.1v
20A
40a 200V ieiunium recuperatio diode
I Description
Descriptio 40a, 200V ultrafast Diodes habent humilem deinceps voltastage gutta et sunt de Planar, Silicon Nitride passivated, Ion-implantata, epitaxial constructione. His cogitationes sunt in animo usu ut industria steering / clamping Diodes et rectifi ers in variis mutatis switching potentia commeatus et alia potentia switching applications. Minimum recuperatio et mollis et mollis recuperare christifs Minimizes sonant et electrica sonitus in multis virtute switching, ita reducendo potentia damnum switching transistor
II features
Minimum damnum
Maximum efficientiam humilis deinceps voltage
princeps current facultatem princeps Surge capacitatem
