25A 1200V Trenchstop Insulated Gate Bipolar Transistor DGC25H120M2 TO-247

25A 1200V Trenchstop Insulated Gate Bipolar Transistor

1 Features 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed,low gate charge,which accords with the RoHS standard.

2.Features： 

 FS Trench Technology, Positive temperature coefficient 

 Low switching losses

 Extremely enhanced avalanche capability 

3.Applications： 

Three-level Inverter

Welding、

UPS…

Vces	Package	Ic(Tj=100℃)
1200V	TO-247-3L	25A