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25A 1200V Trenchstop Insulated Gate Bipolar Transistor DGC25H120M2 TO-247

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching
speed,low gate charge,which accords with the RoHS standard.
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  • DGC25H120M2

  • WXDH

  • TO-247

  • 1200V

  • 25A

25A 1200V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent Vcesat and switching speed,low gate charge,which accords with the RoHS standard.


2.Features： 

 FS Trench Technology, Positive temperature coefficient 

 Low switching losses

 Extremely enhanced avalanche capability 


3.Applications： 

Three-level Inverter

Welding、

UPS…


Vces Package Ic(Tj=100℃)
1200V TO-247-3L 25A 


download G40N120D - DHB.pdf

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IGBT 25A 1200V IGBT 25A 1200V Trenchstop Insulated Gate Bipolar Transistor
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