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18A 650V Insulated Gate Bipolar Transistor DHG20T65D TO-220F

Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation
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18A 650V Insulated Gate Bipolar Transistor DHG20T65D TO-220F

1 Description 


Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. 


Features： 

 FS Trench Technology, Positive temperature coefficient 

 Low saturation voltage: VCE(sat), typ = 1.8V @ IC =18A and TC = 25°C 

 Extremely enhanced avalanche capability



Vces Vcesat Ic
650V 1.8V 18A


download Device DHG50T65D Specification(TO-3PN).pdf

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