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18a 650v insulatas portam bipolar Transistor dhg20t65d ad-220f

Using Donghai scriptor proprietary fossa consilio et provectus fs technology, 650v fs igbt praebet superior conduction et mutandi operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operatio
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18a 650v insulatas portam bipolar Transistor dhg20t65d ad-220f

I Description 


Using Donghai proprietary fossa consilio et provectus fs technology, 650v fs igbt praebet superior conduction et switching operas, princeps NIVIS Avalanche Ruggedeness et Securus parallel operationem. 


Features: 

 fs fossam technology, positivum temperatus coefficiens 

 Minimum Saturation intentione: VCE (Sat), Typ = 1.8v @ IC = 18a et TC = XXV ° 

 maxime amplificata avalanche facultatem



Vces Vcesuat IC
650v 1.8v 18a


Download Fabrica DHG50T65D speciem (to-3pn) .pdf

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