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18A 650V Portae Bipolar Transistor Insulae DHG20T65D TO-220F

Trench consilio usus DongHai et technologiae FS provectae, 650V FS IGBT praebet conductionem et commutationes spectaculas superiores, NIVIS asperitatem altam et facilem operationem parallelam

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Exemplar:
DHG20T65D
Notam:
WXDH
Sarcina:
TO-220F
Datasheet:
Fabrica DHG20T65D Specification(TO-220F).pdf
V:
650V
A:
18A

1 Description

Trench consilio usus DongHai et technologiae FS provectae, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.

Features：

FS Trench Technology, caliditas positiva coefficientis

 Saturatio humilis intentione: VCE(sat), typ = 1.8V @ IC = 18A et TC = 25°C

valde auctus facultatem NIVIS CASUS

Vces	Vcesat	Ic
650V	1.8V	18A

Priora:

IGBT

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