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DSE026N10NA
WXDH
TO-263
100V
180A
180A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test ● AEC-Q101 qualified
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools ● UPS
● Motor control
Vces | RDS(on) (TYP) | ID |
100V | 2.2mΩ | 180A |
180A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test ● AEC-Q101 qualified
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools ● UPS
● Motor control
Vces | RDS(on) (TYP) | ID |
100V | 2.2mΩ | 180A |