Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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16A 600V N-channel Enhancement Mode Power MOSFET F16N60 TO-220F

16A 600V N-channel Enhancement Mode Power MOSFET
Availability:
Quantity:
  • F16N60

  • WXDH

16A 600V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 


2 Features 

● Fast switching

● ESD improved capability 

● Low on resistance(Rdson≤0.5Ω)

● Low gate charge(Typ: 49.3nC) 

● Low reverse transfer capacitances(Typ: 10.5pF)

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications

● Used in various power switching circuit for system miniaturization and higher efficiency.

● Power switch circuit of electron ballast and adaptor

VDSS  RDS(on)(TYP) ID 
600V 0.41Ω 16A



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