 |
| Quantity: | |
|---|---|
30H10/30H10F/30H10E/30H10B/30H10K
WXDH
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low switching loss
● Low on resistance(Rdson≤5.5mΩ)
● Low gate charge(Typ: 43nC)
● Low reverse transfer capacitance(Typ: 215pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
| VDSS | RDS(on) (TYP) | ID |
| 30V | 4mΩ | 100A |
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low switching loss
● Low on resistance(Rdson≤5.5mΩ)
● Low gate charge(Typ: 43nC)
● Low reverse transfer capacitance(Typ: 215pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
| VDSS | RDS(on) (TYP) | ID |
| 30V | 4mΩ | 100A |
