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100A 30V N-channel Enhancement Mode Power MOSFET 30H10/30H10F/30H10E/30H10B/30H10K

100A 30V N-channel Enhancement Mode Power MOSFET
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  • 30H10/30H10F/30H10E/30H10B/30H10K

  • WXDH

100A 30V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low switching loss 

● Low on resistance(Rdson≤5.5mΩ) 

● Low gate charge(Typ: 43nC) 

● Low reverse transfer capacitance(Typ: 215pF) 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications

● Power switching applications 

● Inverter management system 

● Electric tools 

● Automotive electronics



VDSS RDS(on) (TYP) ID 
30V 4mΩ 100A



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100A 30V N-channel Enhancement Mode Power MOSFET
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