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N-Channel Enhancement Modus Power Mosfet 4a 800V B4N80 ad-251b

N-Channel Enhancement Modus Power Mosfet 4A 800V
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N-Channel Enhancement Modus Power Mosfet 4a 800V


I Description

B4N80, Silicon N-Channel Enhanced VDMOSFETS, est adeptus per se-aligned Planar technology quod reducere conduction damnum, amplio switching perficientur et augendae avalanche industria. Et non potest esse in varie Switching Circuit System Miniaturization et altius efficientiam. In sarcina forma est ad-251b, quod secundum Radii vexillum. 


II features 

 Fast Switching 

 humilis in resistentia (rdson≤4.0ω)

 Minimum porta (typical data: 17.3 NC) 

 Minimum Reverse Transfer Capitances (Typical: 4.3pf)

 C% una pulsus Copyops NIVIS CASUS Energy Test 


III Applications 

 Power SWITCH CIRCUS ADAPTER et patina.

Vdss  RDS (on) (Typ) Id 
800v 3.7Ω 4a



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