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10n60
Wxdh
N-Channel Enhancement Modus Power Mosfet 10A 600V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤9.0Ω)
● Minimum porta (Typ: 32nc)
● Low Reverse Transfer Capitances (Typ, 7.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
600V | 0,7 ω | 10a |
N-Channel Enhancement Modus Power Mosfet 10A 600V
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤9.0Ω)
● Minimum porta (Typ, 32nc)
● Low Reverse Transfer Capitances (Typ, 7.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
600V | 0,7 ω | 10a |