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75A 1200V Dimidium pontis IGBT moduli DGA75H120M2T 34mm

Hae portae Insulae Bipolar Transistor provectae fossae et technologiae Fieldstop consilio adhibitae sunt, praeclarum VCEsat et celeritate mutandi, portae humilis crimen. Quod congruit cum RoHS vexillum.
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  • DGA75H120M2T

  • WXDH

  • 34mm

  • DGA75H120M2T.pdf

  • 1200V

  • 75A

75A 1200V Medium pontis moduli

1 Description 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, praevia V CEsat et celeritate mutandi, onera portae humilis adhibebantur. Quod congruit cum RoHS vexillum. 

2 Features 

FS Trench Technology, caliditas positiva coefficientis 

● Saturatio humilis intentione: V CE(sat) typ = 2.0V @ I C = 75A et T j = 25°C 

valde auctus facultatem NIVIS CASUS 

3 A pplic ations 

Welding ​ 

UPS ​ 

Tres -gradu Inverter 

AC et DC servo coegi amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop sarcina
DGA75H120M2T 1200V 75A (Tj=100℃) 2.0V (Typ) 175 34MM


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