Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MODULE » PIM » 600A 1200V Media pars pontis moduli DGD600H120L2T

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600A 1200V Medium pontis moduli moduli DGD600H120L2T

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit VCEsat et celeritate mutandi , portae humilis crimen.Quod congruit cum RoHS vexillum.
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  • DGD600H120L2T

  • WXDH

600A 1200V Medium pontis moduli

1 Description 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit VCEsat et celeritate mutandi , portae humilis crimen.Quod congruit cum RoHS vexillum. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.79V @ IC = 600A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

  •  Welding 

  •  UPS 

  •  Tres gradu Inverter 

  • AC et DC servo amplio coegi



  • Type VCE I c VCEsat,Tj=25℃ Tjop sarcina
    DGD600H120L2T 1200V 600A (Tj=100℃) 1.79V (Type) 150℃ EconoDUAL3
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