Availability | |
---|---|
: | |
5A 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum
Radius vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤1.60)
● Minimum porta (Typ, 12.6nc)
● Humilis Reverse Transfer Capitances (Typ: 4PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system
miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 1.4Ω | 5a |
5A 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum
Radius vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤1.60)
● Minimum porta (Typ, 12.6nc)
● Humilis Reverse Transfer Capitances (Typ: 4PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system
miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 1.4Ω | 5a |