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100V / 12Mω / 60a N-Mosfet DSd150n10l3 ad-252b

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching
perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
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100V / 12Mω / 60a N-Mosfet


I Description 

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.

2.Feature

● humilis in resistentia (rdson≤1.4Ω)

● Minimum Reverse Transfer Capitances (Typ, 5.5pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 

  • PB-libera plating / halogen-libera / Rohs obsequium


III Applications 

• motricium imperium et coegi 

• crimen / missionem in altilium administratione ratio

• Synchronous rectifier ad SMPS


Vdss RDS (on) (Typ) Id
100v 12Mω 60a


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