 |
| Quantity: | |
|---|---|
DHS015N06E
WXDH
TO-263
60V
180A
N-channel Enhancement Mode Power MOSFET 180A 60V
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Motor control and drive
● Battery management
● UPS
● Power tools
| VDS | RDS(on) (TYP) | ID（package limit） |
| 60V | 1.6mΩ | 180A |
N-channel Enhancement Mode Power MOSFET 180A 60V
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Motor control and drive
● Battery management
● UPS
● Power tools
| VDS | RDS(on) (TYP) | ID（package limit） |
| 60V | 1.6mΩ | 180A |
